Batch systems can pass several wafers or samples simultaneously through in a single process, usually in a single chamber. An oxidation furnace is an example of a batch processing system. Some batch systems also have the capability to apply several processes simultaneously.
Cluster tools consist of multiple chambers for different processes. The cluster tool usually has a central robot to feed multiple process chambers. Cluster tools are commonly used to perform multiple process steps on a series of single wafer or samples and therefore may improve process control and cycle time compared a batch processor.
Small, bench top mounted vacuum deposition systems designed for low volume experimental or analytical applications. Sputter coaters for SEM or TEM preparation would fall into this category.
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In chemical vapor deposition (CVD) processes, a precursor gas or mixture of gases is fed into a chamber and reacted with an energy source (usually heat) to form thin film coatings. CVD processes are useful in the deposition of dielectric films such as oxides and nitrides. The energy or heat source may be a plasma, substrate induction, or resistance heater.
Physical vapor deposition processes form thin film layers through evaporation or sputtering (glow discharge processes) of atoms from a source and then condensing or depositing the material onto the surface, substrate, wafer or part.
In an ion implantation process, a highly accelerated beam of charged atoms (ions) is directed at a surface resulting in the capture of some of these atoms in the surface of the substrate or wafer. In microelectronics, ion implantation is used to dopant silicon with boron (B), phosphorus (P), arsenic (As) or antimony (Sb). A subsequent annealing treatment or thermal cycle is required to drive the implanted ions into the surface. Ion implantation can also be used to form wear resistance layer
Thin film equipment using a liquid phase process such as sol-gel, electrochemical deposition, liquid phase epitaxy, electroless plating, electroplating or electrophoretic deposition.
Plasma ashing, plasma cleaning, sputter etching, sputter precleaning or ion milling are processes that use plasma to remove layers of material from a substrate or wafer for cleaning purposes. A clean, contamination-free surface is required for subsequent thin film deposition or wet processing.
In rapid thermal processing (RTP), silicon wafers are rapidly oxidized to form a silicon dioxide dielectric layer by a brief exposure to high temperature steam.
Extended thermal processing using a longer cycle or process time for oxidation, wafer annealing, head magnetic annealing or driving dopants into a substrate.
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A PVD process using resistance heating to vaporize the material to be deposited on the substrate. Passing current through the tungsten filament or element heats material on a tungsten filament or in a crucible surrounded by the resistance-heating element.
A PVD process using plasma (glow-discharge) to ionize or knock (sputter) atoms off a target (source material) and deposit the positively charged ions on a substrate or wafer. The DC power source results in metal target with a negative bias and a substrate with a positive bias causing unidirectional plasma current from the wafer to the target.
A PVD process using plasma (glow-discharge) to ionize or knock (sputter) atoms off a target (source material) and deposit the positively charged ions on a substrate or wafer. The high frequency, alternating current (AC) or radio frequency (RF) power source can provide a forward (positive) or reverse (negative) bias. In DC sputtering, only positive sputtering occurs. The negative sputtering or is useful for sputtering cleaning or ion milling of the substrate prior to deposition.
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Equipment for deposition of thin films or the modification of surfaces to enhance wear resistance. A common example is the formation of titanium nitride films on cutting tools.
Equipment for deposition of thin films on lens, fiber or mirrors or other optical components. The films can be used to alter reflectivity, refractive index or other properties.
Systems used to provide coatings implants or prostheses, medical devices and surgical tools to enhance compatibility or functionality in medical applications.
Systems designed for research or production of materials structures or electronic circuits in the nanometer (10-9 meter) range. The products may consist of films, fibers, nanotubes or powders.
Systems for coating samples for observation in an electron microscope or other analytical units. Metallization or a thin film metallic or carbon coating provides a conductive layer for charge dissipation. Also, specialized systems for the fabrication of advanced coatings and nanomaterials.
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Systems used for the deposition of dielectric or insulating layers of oxides, silicides or nitrides as well as other inorganic compounds, glasses or other ceramics.
Ion implanters or other system used to deposit, implant or drive in dopants such as boron (B), phosphorus (P), arsenic (As), gallium (Ga) or antimony (Sb).
Organic or polymer films can be deposited from precursor chemicals. Plasma enhanced chemical vapor deposition is often used in depositing polymer films.
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System has the capable to automatically load samples into the vacuum system or chamber for processing. System capable of coating continuous products such as fiber, wire, or webs would also fit into this category.
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Coating system that can deposit multiple materials sources either simultaneously or sequentially within the run cycle. The systems may have a turnstile containing several different sources or materials.
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Turbomolecular pumps utilize a series of high-speed rotors (25,000 to 75,000 rpm) and flow stabilizing, stationary stators to impart a preferential motion to gas molecules and create molecular flow through the pump. They are often described as "molecular bats." They are also known as axial flow turbines.
Molecular drag pump are similar to turbomolecular pumps except a rotor drum with a ridged surface and cylindrical stator are utilized in place of stator and rotor blades to impart a preferential motion to gas molecules and create molecular flow through the pump. Hybrid pumps are available that use combinations of blades and ridged drums.
Diffusion pumps utilize jets of diffusion oil vapor to impart momentum and sweep gas molecules from the system. Diffusion pumps have no moving parts and provide the highest pumping speed for lighter gases like helium and hydrogen. Diffusion pump oil can wander or backstream into the system causing process contamination.
Ion pumps utilize a sputtering process to ionize then entrain gas molecules and embed them into the anode or cathode wall. The entrainment process can utilize a getter such as titanium to bind and bury the molecules. They can operate in the ultra high vacuum range and eliminate contamination by organic molecules.
Cryogenic pumps utilize extremely cold (liquid N2 and He temperatures) surfaces and absorption surfaces freeze or trap molecules. Cryogenic pumps can operate with relatively high fore or exhaust pressures. Cryogenic pumps must be periodically generated to purge the frozen or trapped gases.
Cryosorption pumps evacuate gas molecules from a volume by adsorbing them on the chilled surface of a molecular sieve. These molecular sieves are designed to have a large surface area-to-volume ratio to maximize the adsorbing area.
Getter or titanium sublimation pumps (TSP) entrain gas molecules in a getter, or material that is vaporized in order to absorb or capture the molecules, and embed them on the cold outer wall of the chamber. These may also use "non-evaporating Gettering sorption" techniques by utilizing a large-surface-area porous matrix for entrainment.
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